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CP736V-2N3637
175V,1A,1W Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)
CP736V-2N3637 product image
Documentation Links:
Device Datasheet
Case & Material Composition Datasheet
Item Number Status Description Packaging Base Availability ECCN Code HTS Code Part Marking: Request Samples
CP736V-2N3637-CM Active 175V,1A,1W Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A) WafflePack@400 Please call for Qty
EAR99 8541.29.0040  
CP736V-2N3637-CT Active 175V,1A,1W Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A) WafflePack@400 Please call for Qty
EAR99 8541.29.0040  
CP736V-2N3637-CT20 Special Order Item 175V,1A,1W Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A) WafflePack@20 Please call for Qty
EAR99 8541.29.0040  

Please note:
  1. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).
  2. If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).
A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:
Analytical Test Report:Wafer Zener
Analytical Test Report:Wafer Schottky
Analytical Test Report:Active Device, Rectifier
Analytical Test Report:Wafer/Die
Analytical Test Report:Die
Analytical Test Report:Die
Package Detail Document:WAFER

Alternate Devices with Different Packaging:
Datasheet
Part Number
Description
Packaging
Package
Details
&
Composition
Status
Availability

2N3637
175V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
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