CPC10-SIC08-650 :: Item Details :: Bare die,52.800 X 52.800 mils,8A, 650V SiC Schottky Diode

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CPC10-SIC08-650
Bare die,52.800 X 52.800 mils,8A, 650V SiC Schottky Diode

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Please refer to the Device Datasheet for an image of the part case and material composition information.

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Device Datasheet

Case & Material Composition Datasheet

Item Number

Status

Description

Packaging Base

Availability

ECCN Code

HTS Code

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CPC10-SIC08-650-CT

Active

Bare die,52.800 X 52.800 mils,8A, 650V SiC Schottky Diode

WafflePack@400

Please call for Qty

EAR99

8541.10.0040

CPC10-SIC08-650-WM

Active

Bare die,52.800 X 52.800 mils,8A, 650V SiC Schottky Diode

Wafer@8,065*</br>*Estimated, die qty will vary based on probing

Please call for Qty

EAR99

8541.10.0040

CPC10-SIC08-650-WN

Active

Bare die,52.800 X 52.800 mils,8A, 650V SiC Schottky Diode

Wafer@8,065*</br>*Estimated, die qty will vary based on probing

Please call for Qty

EAR99

8541.10.0040

Please note:

If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).

If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).

A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:

Analytical Test Report:Wafer Transistor

Analytical Test Report:Wafer Schottky

Analytical Test Report:Wafer Switching Diode

Analytical Test Report:Die

Product Brief:PB for Silicon Carbide Die

Package Detail Document:WAFER

Analytical Test Report:Wafer Rectifier

Analytical Test Report:Wafer

Analytical Test Report:TVS Die

Analytical Test Report:Wafer/Die

Analytical Test Report:Die

Alternate Devices with Different Packaging:
Datasheet	Part Number	Description	Packaging	Package Details & Composition	Status	Availability

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