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CPD83V-1N4448
150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching
The image for CPD83V-1N4448
is currently unavailable.

Please refer to the Device Datasheet for an image of the part case and material composition information.
Documentation Links:
Device Datasheet
Case & Material Composition Datasheet
Item Number Status Description Packaging Base Availability ECCN Code HTS Code Part Marking: Request Samples
CPD83V-1N4448-CT Active 150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching WafflePack@400 Please call for Qty
EAR99 8541.10.0040  
CPD83V-1N4448-WN Active 150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching Wafer@142,056*</br>*Estimated, die qty will vary based on probing Please call for Qty
EAR99 8541.10.0040  

Please note:
  1. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).
  2. If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).
A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:
Analytical Test Report:Wafer Transistor
Analytical Test Report:Wafer Schottky
Analytical Test Report:Wafer Switching Diode
Analytical Test Report:Wafer Zener
Analytical Test Report:Wafer Schottky
Analytical Test Report:Active Device, Rectifier
Analytical Test Report:Wafer/Die
Analytical Test Report:Die
Analytical Test Report:Die
Analytical Test Report:Die
Analytical Test Report:Die
Analytical Test Report:Die
Spice Model:Spice Model CPD83V
Package Detail Document:WAFER
Analytical Test Report:Wafer Zener
Analytical Test Report:Wafer Rectifier
Analytical Test Report:Wafer MOSFET
Analytical Test Report:TVS Die
Analytical Test Report:Wafer/Die
Analytical Test Report:Die
Analytical Test Report:Die
Process Change Notice:Wafer Diameter Change from 4"

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