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CZT3090LE
50V,3A,2W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT)
CZT3090LE product image
Documentation Links:
Device Datasheet
Case & Material Composition Datasheet
Chip Process Datasheet:CP384X-CZT3090LE
Item Number Status Description Packaging Base Availability ECCN Code HTS Code Part Marking: Request Samples
CZT3090LE BK Active 50V,3A,2W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT) Box@350 Please call for Qty
EAR99 8541.29.0095 CZT3090LE 
Either
PBFREE
TIN/LEAD
CZT3090LE TR Active 50V,3A,2W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT) Reel@1,000 Please call for Qty
EAR99 8541.29.0095 CZT3090LE 
Either
PBFREE
TIN/LEAD
CP384X-CZT3090LE-CT Active 50V,3A,2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A) WafflePack@400 Please call for Qty
EAR99 8541.21.0040  
CP384X-CZT3090LE-WN Active 50V,3A,2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A) Wafer@10,823*</br>*Estimated, die qty will vary based on probing Please call for Qty
EAR99 8541.21.0040  

Please note:
  1. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).
  2. If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).
A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:
Analytical Test Report:Gold Bond Wire
Analytical Test Report:Epoxy Molding Compound
Analytical Test Report:Leadframe
Analytical Test Report:Die Attach
Analytical Test Report:Sn Plating
Analytical Test Report:Green Epoxy Molding Compound
Analytical Test Report:Copper Bond Wire
Spice Model:Spice Model CZT3090LE
Material Composition:SOT-223
Process Change Notice:Copper Wire Bonding - SOT-223
Product Reliability Data:SOT-223 Package Reliability

Alternate Devices with Different Packaging:
Datasheet
Part Number
Description
Packaging
Package
Details
&
Composition
Status
Availability

CP384X-CZT3090LE
50V,3A,2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)
WaferForm, WafflePack
Active

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