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manufacturer of innovative discrete semiconductor solutions
Central Semiconductor

2N5322
75V,2A,10W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
2N5322 product image
Documentation Links:
Device Datasheet
Case & Material Composition Datasheet
Chip Process Datasheet:CP714V-CBCX69
Item Number Status Description Packaging Base Availability ECCN Code HTS Code Part Marking: Request Samples
2N5322 Active 75V,2A,10W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch Box@500 Please call for Qty
 EAR99 8541.29.0075 Cen 2N5322 D/C 
Either
PBFREE
TIN/LEAD
CP714V-2N5322-CT Active 75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) WafflePack@400 Please call for Qty
 EAR99 8541.29.0040  
CP714V-2N5322-WN Active 75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) Wafer@10,560*</br>*Estimated, die qty will vary based on probing Please call for Qty
 EAR99 8541.29.0040  
CP714V-2N5322-WR Active 75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A) Wafer@10,560*</br>*Estimated, die qty will vary based on probing Please call for Qty
 EAR99 8541.29.0040  

Please note:
  1. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).
  2. If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).
A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:
Analytical Test Report:Header Assembly
Analytical Test Report:Header
Analytical Test Report:Bond Wire
Analytical Test Report:Pure Tin Solder
Analytical Test Report:Cap
Spice Model:Spice Model 2N5322
Material Composition:TO-39
Package Detail Document:TO-39
Product Reliability Data:TO-39 Package Reliability

Alternate Devices with Different Packaging:
Datasheet
Part Number
Description
Packaging
Package
Details &
Composition
Status
Availability

CP714V-2N5322 		75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)
WaferForm, WafflePack
Active

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