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CPC02-SIC10-1200
Bare die,86.600 X 86.600 mils,10A, 1200V SiC Schottky Diode
The image for CPC02-SIC10-1200
is currently unavailable.

Please refer to the Device Datasheet for an image of the part case and material composition information.
Documentation Links:
Device Datasheet
Case & Material Composition Datasheet
Item Number Status Description Packaging Base Availability ECCN Code HTS Code Part Marking: Request Samples
CPC02-SIC10-1200-CT Discontinued, Stock Only Bare die,86.600 X 86.600 mils,10A, 1200V SiC Schottky Diode WafflePack@100 In Stock
EAR99 8541.10.0040  

Please note:
  1. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD).
  2. If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE).
A Central sales representative will confirm the availability of the plating type requested.

Additional Documentation Links:
Analytical Test Report:Wafer Transistor
Analytical Test Report:Wafer Schottky
Analytical Test Report:Wafer Switching Diode
Analytical Test Report:Die
Analytical Test Report:Die
Package Detail Document:WAFER

Alternate Devices with Different Packaging:
Datasheet
Part Number
Description
Packaging
Package
Details
&
Composition
Status
Availability

CPC06-SIC10-1200
Bare die,87.000 X 87.000 mils,10A, 1200V SiC Schottky Diode
WaferForm, WafflePack
Active

CPC14-SIC10-1200
Bare die,87.000 X 87.000 mils,10A, 1200V SiC Schottky Diode
WaferForm, WafflePack
Active

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